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CZおよびFZシリコン単結晶はその高い完全性がつとに知られておりＸ線領域の放射光分光素子として広く使われている。シリコン単結晶を用いて高エネルギー分解能、高指向性の性能をもつＸ線光学素子また画像化素子としての開発が盛んである。 世界一結晶製造メーカーで長年結晶成長と評価に携わってこられた阿部孝夫博士と長年シリコン単結晶評価に携わってこられた川戸清爾博士に同席いただき、それぞれ点欠陥を制御しより完全な結晶へ向かう試みとその評価法を紹介いただき、この“点欠陥を見る”手段の開発を全員で議論する。さらに格子定数超精密測定、超高エネルギー分解能X線光学系、X線暗視野法利用の医用画像と周辺技術開発、新X線トポグラフィ開発などシリコン単結晶をめぐる新しい動きも議論する。 It is well known that Cz and FZ grown silicon single crystal is highly perfect. They are used as optical element in synchrotron x-radiation. Silicon has high performance of optical element that can provide high energy resolution as well as high parallelity of the beam which is most appropriate for imaging. FZ silicon has a lattice fluctuation at the order of d/d=10-7~10-8. In order to achieve energy resolution higher than E/E=10-8.or beam divergence smaller than dQ=10-8 rad energetic effort to make silicon more perfect will be required. Researchers who have common interest over surveying breakthrough point will gather to discuss the above problem. Dr T. Abe who has been involved long in the growth and characterization of silicon in a world leading company agrees to give a talk on his great efforts to control point defects and Dr S. Kawada who has been involved long in X-ray characterization of silicon single crystal will give a talk on a variety of X-ray characterization of silicon single crystal. As their extension all the participants will discuss about how to see point defects. Furthermore measurement of hyper precision lattice spacing of silicon single crystal, ultra high energy resolution X-ray optics, medical imaging using X-ray dark-field imaging and its associated technique developed, novel X-ray topography and new movement in relation to silicon singly crystal will be also discussed.
＊＊KEKのデータベース「KISS」にプロシーディングスが掲載されました。＊＊
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研究会目的