-Program-

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December 12, 2017
Time	Title	Speaker
09:30	Start accepting
10:00-10:10	Opening message	Sunao Ishihara (The U. of Tokyo)
10:10-12:10　　　　　 　　　　　　　　　　　　　　　　　　　　 　Chairperson: Hidemi Ishiuchi（EIDEC)
10:10-10:50	-Invited- "EUV industrialization for HVM and future outlook" 4.5MB	Michael Lercel (ASML)
10:50-11:30	-Invited- “Laser plasma amplification of SACLA XFEL beam and its extension to EUV-FEL applications” 2.9MB	Tetsuya Ishikawa (RIKEN SPring-8 Center)
11:30-12:10	-Invited- “Research on the interaction of a SXFEL with matter for EUV ultra-precision nano-fabrication” 2.1MB	Masaharu Nishikino (QST)
－　Lunch time【12:10-13:30】　－
13:30-14:45　　　　　　　　　　　　　　　　　　　　　　　　　 　Chairperson: Ryoichi Hajima (QST)
13:30-13:55	"EUV-FEL Light Source for Lithography" 8.0MB	Norio Nakamura (KEK)
13:55-14:20	"Accelerating technology - Superconducting RF cavity" 963KB	Takaaki Furuya (KEK)
14:20-14:45	"Nonlinear optical response of solids in EUV range revealed by FEL"	Yasuyuki Hirata (The U. of Tokyo)
－　coffee break【14:45-15:15】　－
15:15-16:30　　　　　 　　　　　　　　　　　　　　　　　　　　　 Chairperson: Masakazu Washio (Waseda Univ.)
15:15-15:40	"High Power LPP-EUV Source with Long Collector Mirror Lifetime for High Volume Semiconductor Manufacturing" 2.4MB	Hakaru Mizoguchi (Gigaphoton)
15:40-16:05	"SRF activities at MHI-MS" 4.1MB	Hiroshi Hara (Mitsubishi Heavy Industries Machinery Systems)
16:05-16:30	"Perspective of Accelerator Technology in Toshiba" 1.6MB	Yutaka Hirata (TOSHIBA Energy Systems & Solutions)
16:30-16:50　-Discussion-　 　　　　　　　　　Overview of R&D plan and total discussion　　　　　　　　 　Hiroshi Kawata (KEK)
16:50	Closing speech	Takeshi Okada (AIST)
16:55	Closed