-Program-

  *Presentation materials will be seen on this page after workshop                   
December 12, 2017
Time Title
Speaker 
09:30 Start accepting  
10:00-10:10 Opening message Sunao Ishihara (The U. of Tokyo)
10:10-12:10                            Chairperson: Hidemi Ishiuchi(EIDEC)
10:10-10:50 -Invited-
"EUV industrialization for HVM and future outlook"

Michael Lercel (ASML)
10:50-11:30 -Invited-
“Laser plasma amplification of SACLA XFEL beam and its extension to EUV-FEL applications”

Tetsuya Ishikawa (RIKEN SPring-8 Center)
11:30-12:10 -Invited-
“Research on the interaction of a SXFEL with matter for EUV ultra-precision nano-fabrication”


Masaharu Nishikino (QST)
- Lunc time【12:10-13:30】 -
13:30-14:45                           Chairperson: Ryoichi Hajima (QST)
13:30-13:55 "EUV-FEL Light Source for Lithography" Norio Nakamura (KEK)
13:55-14:20 "Accelerating technology - Superconducting RF cavity" Takaaki Furuya (KEK)
14:20-14:45 "Nonlinear optical response of solids in EUV range revealed by FEL" Yasuyuki Hirata (The U. of Tokyo)
- coffee break【14:45-15:15】 -
15:15-16:30                            Chairperson: Masakazu Washio (Waseda Univ.)
15:15-15:40 "High Power LPP-EUV Source with Long Collector Mirror Lifetime for High Volume Semiconductor Manufacturing"
Hakaru Mizoguchi (Gigaphoton)
15:40-16:05 "SRF activities at MHI-MS" Hiroshi Hara (Mitsubishi Heavy Industries Machinery Systems)
16:05-16:30 "Perspective of Accelerator Technology in Toshiba"
Yutaka Hirata (TOSHIBA Energy Systems & Solutions)
16:30-16:50 -Discussion- 
         Overview of R&D plan and total discussion          Hiroshi Kawata (KEK) 
16:50 Closing speech    Takeshi Okada (AIST)
16:55 Closed